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AGM40P35A-KU - MOSFET

Description

The AGM40P35A-KU combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet preview – AGM40P35A-KU

Datasheet Details

Part number AGM40P35A-KU
Manufacturer AGMSEMI
File Size 780.88 KB
Description MOSFET
Datasheet download datasheet AGM40P35A-KU Datasheet
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Full PDF Text Transcription

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● General Description The AGM40P35A-KU combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS -40V RDSON 15mΩ PDFN5*6 Pin Configuration Package Marking and Ordering Information AGM40P35A-KU ID -60A Device Marking Device AGM40P35A-KU AGM40P35A-KU Device Package PDFN5*6 Reel Size 330mm Tape width 12mm Quantity 3000 Table 1.
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