AGMSEMI AGM420MD
The AGM420MD combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.| Part No. | AGM420MD |
|---|---|
| Datasheet | AGM420MD Download |
| Manufacturer |  AGMSEMI |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
●FEATURES
● Advance high cell density Trench technology● Low RDS(ON) to minimize conductive loss
●Low Gate Charge for fast switching
●Low Thermal resistance
● Application
●MB/VGA Vcore
●SMPS 2nd Synchronous Rectifier
●POL application
●BLDC Motor driver Product Summary BVDSS 40V -40V RDSON 18mΩ 26mΩ TO-254-4 Pin Configuration D1 G1 S1 ID 20A -18A D2 G2 S2 Package Marking and Ordering Information Device Marking AGM420MD Device AGM420MD Device Package TO-252-4 Reel Size --mm Tape width --mm Quantity 2500 Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol VDS VGS ID IDM (pluse) PD EAS TJ,TSTG Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Drain Current-Continuous(Tc=25℃) (Note 1) Drain Current-Continuous(Tc=100℃) Drain Current-Continuous@ Current-Pulsed (Note 2) Total Power Dissipation(Tc=25℃) Total Power Dissipation(TA=100℃) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Rating N-Ch P-Ch 40 ±20 20 15 50 25 10 31 -55 To 150 -40 ±20 -18 -16 -40 25 10 58 -55 To 150 Table 2.
