AGM420MAP - MOSFET

Description

The AGM420MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

s.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance.
100% Avalanche tested.
100% DVDS tested.

AGMSEMI

📥 Download Datasheet

Datasheet Details

Part number	AGM420MAP
Manufacturer	AGMSEMI
File Size	1.24 MB
Description	MOSFET
Datasheet	AGM420MAP Datasheet
Additional preview pages of the AGM420MAP datasheet.

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Full PDF Text Transcription

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AGM420MAP ● General Description The AGM420MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ■100% Avalanche tested ■100% DVDS tested ● Application ■MB/VGA Vcore ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver Product Summary BVDSS 40V -40V RDSON 16mΩ 42mΩ ID 13.5A -10.8A PDFN3.3*3.3 Pin Configuration D1 D1D2D2 S1 G1 S2 G2 D1 G1 G2 S1 D2 S2 Package Marking and Ordering Information Device Marking Device AGM420MAP AGM420MAP Device Package PDFN3.3*3.

Published: Dec 28, 2024 |