AGMSEMI AGM425MC
The AGM425MC combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.| Part No. | AGM425MC |
|---|---|
| Datasheet | AGM425MC Download |
| Manufacturer |  AGMSEMI |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
●FEATURES
● Advance high cell density Trench technology● Low RDS(ON) to minimize conductive loss
●Low Gate Charge for fast switching
●Low Thermal resistance
● Application
●MB/VGA Vcore
●SMPS 2nd Synchronous Rectifier
●POL application
●BLDC Motor driver Product Summary BVDSS 40V -40V RDSON 18mΩ 34mΩ ID 7.6A -6.5A SOP8 Pin Configuration S1 G1 S2 G2 D1 D1 D2 D2 D1 G1 S1 D2 G2 S2 Package Marking and Ordering Information Device Marking AGM425MC Device AGM425MC Device Package SOP8 Reel Size --mm Tape width --mm Quantity 3000 Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol VDS VGS ID IDM (pluse) PD EAS TJ,TSTG Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Drain Current-Continuous(Tc=25℃) (Note 1) Drain Current-Continuous(Tc=100℃) Drain Current-Continuous@ Current-Pulsed (Note 2) Total Power Dissipation(Tc=25℃) Total Power Dissipation(Tc=100℃) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Rating N-Ch P-Ch 40 ±20 7.6 5.5 24 2.4 1.0 24 -55 To 150 -40 ±20 -6.5 -4.2 -24 3.0 1.2 18 -55 To 150 Units V V A A A W W mJ ℃ Table 2.
