AGM425M - MOSFET

Description

The AGM425M combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

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Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGM425M
Manufacturer	AGMSEMI
File Size	1.18 MB
Description	MOSFET
Datasheet	AGM425M Datasheet
Additional preview pages of the AGM425M datasheet.

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Full PDF Text Transcription

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AGM425M ● General Description The AGM425M combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ● Application ■MB/VGA Vcore ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver Product Summary BVDSS 40V -40V RDSON 25mΩ 65mΩ ID 6.6A -5.5A SOP8 Pin Configuration S1 G1 S2 G2 D1 D1 D2 D2 D1 G1 S1 D2 G2 S2 Package Marking and Ordering Information Device Marking AGM425M Device AGM425M Device Package SOP8 Reel Size --mm Tape width --mm Quantity 3000 Table 1.

Published: Dec 28, 2024 |