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AGM608C - MOSFET

Description

The AGM608C combines advanced trenchMOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet Details

Part number AGM608C
Manufacturer AGMSEMI
File Size 777.48 KB
Description MOSFET
Datasheet download datasheet AGM608C Datasheet
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Full PDF Text Transcription

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AGM608C ● General Description The AGM608C combines advanced trenchMOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS 60V RDSON 4.8mΩ TO-220 Pin Configuration ID 90A Package Marking and Ordering Information Device Marking AGM608C Device AGM608C Device Package TO-220 Reel Size ---- Tape width ---- Quantity 1000 Table 1.
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