AGM608D - MOSFET

Description

The AGM608D combines advanced trenchMOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

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Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGM608D
Manufacturer	AGMSEMI
File Size	756.79 KB
Description	MOSFET
Datasheet	AGM608D Datasheet
Additional preview pages of the AGM608D datasheet.

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Full PDF Text Transcription

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AGM608D ● General Description The AGM608D combines advanced trenchMOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS 60V RDSON 4.9mΩ TO-252 Pin Configuration D DS G ID 80A Package Marking and Ordering Information Device Marking AGM608D Device AGM608D Device Package TO-252 Reel Size 330mm Tape width 16mm Quantity 2500 Table 1.

Published: Dec 28, 2024 |