AGMSEMI AGM7N65D
The AGM7N65D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .| Part No. | AGM7N65D |
|---|---|
| Datasheet | AGM7N65D Download |
| Manufacturer |  AGMSEMI |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Product Summary This device is ideal for load switch and battery protection applications.●
FEATURES
BVDSS RDSON ID 650V 1.37Ω 7A● Advance high cell density Trench technology
● Low RDS(ON) to minimize conductive loss
● Low Gate Charge for fast switching TO-252 Pin Configuration D
● Low Thermal resistance
● Application
● Electronic Ballast
● Electronic Transformer
● Switch Mode Power Supply DS G Package Marking and Ordering Information Device Marking AGM7N65D Device AGM7N65D Device Package TO-252 Reel Size 330mm Table 1.
ABSOLUTE MAXIMUM RATINGS
(Tc=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) Drain Current-Continuous(Tc=25℃) (Note 1) Drain Current-Continuous(Tc=100℃) Drain Current-Continuous@ Current-Pulsed (Note 2) PD EAS TJ,TSTG Maximum Power Dissipation(Tc=25℃) Maximum Power Dissipation(Tc=100℃) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Tap...
