AGM7N65D - MOSFET

Description

The AGM7N65D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

s BVDSS RDSON ID 650V 1.37Ω 7A.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching TO-252 Pin Configuration D.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGM7N65D
Manufacturer	AGMSEMI
File Size	713.02 KB
Description	MOSFET
Datasheet	AGM7N65D Datasheet
Additional preview pages of the AGM7N65D datasheet.

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Full PDF Text Transcription

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AGM7N65D ● General Description The AGM7N65D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 650V 1.37Ω 7A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching TO-252 Pin Configuration D ■ Low Thermal resistance ● Application ■ Electronic Ballast ■ Electronic Transformer ■ Switch Mode Power Supply DS G Package Marking and Ordering Information Device Marking AGM7N65D Device AGM7N65D Device Package TO-252 Reel Size 330mm Table 1.

Published: Dec 28, 2024 |