AGM7N65F - MOSFET

Description

to provide extremely low RDS(ON) .

protection applications.

Features

s 650V 1.37Ω 7A.
Advance high cell density Trench technology TO-220F Pin Configuration.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGM7N65F
Manufacturer	AGMSEMI
File Size	597.36 KB
Description	MOSFET
Datasheet	AGM7N65F Datasheet
Additional preview pages of the AGM7N65F datasheet.

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Full PDF Text Transcription

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AGM7N65F ● General Description The AGM7N65F combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery BVDSS RDSON ID protection applications. ● Features 650V 1.37Ω 7A ■ Advance high cell density Trench technology TO-220F Pin Configuration ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ Electronic Ballast ■ Electronic Transformer ■ Switch Mode Power Supply Package Marking and Ordering Information Device Marking AGM7N65F Device AGM7N65F Device Package TO-220F Reel Size ---- Tape width ---- Quantity 1000 Table 1.

Published: Dec 28, 2024 |