AGM7N65F Overview
Description
The AGM7N65F combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery BVDSS RDSON ID protection applications.
Key Features
- Advance high cell density Trench technology TO-220F - Low RDS(ON) to minimize conductive loss
- Low Gate Charge for fast switching
