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AGMH12N10C Datasheet MOSFET

Manufacturer: AGMSEMI

Overview: AGMH12N10C ● General.

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General Description

The AGMH12N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

Product Summary This device is ideal for load switch and battery protection applications.

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Key Features

  • s BVDSS RDSON ID 100V 9.6mΩ 55A.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching TO-220 Pin Configuration.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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