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AGMH12N10C - MOSFET

Description

The AGMH12N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s BVDSS RDSON ID 100V 9.6mΩ 55A.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching TO-220 Pin Configuration.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet Details

Part number AGMH12N10C
Manufacturer AGMSEMI
File Size 1.33 MB
Description MOSFET
Datasheet download datasheet AGMH12N10C Datasheet
Additional preview pages of the AGMH12N10C datasheet.

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AGMH12N10C ● General Description The AGMH12N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 100V 9.6mΩ 55A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching TO-220 Pin Configuration ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking Device AGMH12N10C AGMH12N10C Device Package TO-220 Reel Size ---- Table 1.
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