AGMH12N10D Overview
Description
The AGMH12N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Product Summary This device is ideal for load switch and battery protection applications.
Key Features
- Advance high cell density Trench technology
- Low RDS(ON) to minimize conductive loss
- Low Gate Charge for fast switching
- Low TO-252 D
- 100% Avalanche test
- 100% DVDS tested
