AGMH12N10D Description
The AGMH12N10D bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications.
AGMH12N10D Key Features
- Advance high cell density Trench technology
- Low RDS(ON) to minimize conductive loss
- Low Gate Charge for fast switching
- Low Thermal resistance