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AGMH12N10D Datasheet MOSFET

Manufacturer: AGMSEMI

Overview: AGMH12N10D ● General.

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General Description

The AGMH12N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

Product Summary This device is ideal for load switch and battery protection applications.

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Key Features

  • s BVDSS RDSON ID 100V 9.6mΩ 65A.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance TO-252 Pin Configuration D.
  • 100% Avalanche test.
  • 100% DVDS tested.

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