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AGMH12N10D - MOSFET

Description

The AGMH12N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s BVDSS RDSON ID 100V 9.6mΩ 65A.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance TO-252 Pin Configuration D.
  • 100% Avalanche test.
  • 100% DVDS tested.

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Datasheet Details

Part number AGMH12N10D
Manufacturer AGMSEMI
File Size 1.44 MB
Description MOSFET
Datasheet download datasheet AGMH12N10D Datasheet
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AGMH12N10D ● General Description The AGMH12N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 100V 9.6mΩ 65A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance TO-252 Pin Configuration D ■ 100% Avalanche test ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier DS G ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking Device AGMH12N10D AGMH12N10D Device Package TO-252 Reel Size 330mm Tape width 16mm Quantity 2500 Table 1.
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