AiT Semiconductor 2SA1362
The 2SA1362-Y & 2SA1362-G are available in SOT-23 package. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied.| Part No. | 2SA1362 |
|---|---|
| Datasheet | 2SA1362 Download |
| Manufacturer |  AiT Semiconductor |
| Description | SILICON PNP EPITAXIAL TYPE TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
ORDERING INFORMATION Package Type Part Number SOT-23 2SA1362-Y 2SA1362-G SPQ 3,000pcs/Reel AiT provides all RoHS Compliant Products hFE CLASSIFICATION Rank Y G Range 120 ~ 240 200 ~ 400 PINDESCRIPTION
● Suitable for the driver stage of small motors.● Small Package PIN
DESCRIPTION
PIN# 1 2 3DESCRIPTION
Base Emitter CollectorABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise specified. VCBO, Collector-Base Voltage -15 V VCEO, Collector-Emitter Voltage -15 V VEBO, Emitter-Base Voltage -5 V IC, Collector Current -800 mA IB, Base Current -160 mA PC, Collector Dissipation TJ, Junction Temperature 200 mW 150 °C Tstg, Storage Temperature -55 ~ +150 °C Stresses above may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. REV1.0 - JAN 2025 RELEASED - -1- AiT Semiconductor Inc. 2SA1362 TRANSISTOR SILICON PNP EPITAXIAL TYPE TRANSISTORELECTRICAL CHARACTERISTICS
TA=25℃ unless otherwise specified.
