Toshiba 2SA1362
Silicon PNP Transistor
| Part No. | 2SA1362 |
|---|---|
| Datasheet | 2SA1362 Download |
| Manufacturer |  Toshiba |
| Description | Silicon PNP Transistor |
| Buy | Stock & Price |
APPLICATIONS
Power SwitchingAPPLICATIONS
2SA1362 Unit: mm● High DC current gain: hFE = 120 to 400
● Low saturation voltage: VCE (sat) = −0.2 V (max) (IC = −400 mA, IB = −8 mA)
● Suitable for driver stage of small motor
● Small package
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage VCEO −15 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB −160 mA JEDEC TO-236MOD Collector power dissipation PC 200 mW JEITA SC-59 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design...
