AiT Semiconductor 2SC3356W
The 2SC3356W is available in SC-70 package. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied.| Part No. | 2SC3356W |
|---|---|
| Datasheet | 2SC3356W Download |
| Manufacturer |  AiT Semiconductor |
| Description | NPN SILICON EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
The 2SC3356W is available in SC-70 package. ORDERING INFORMATION Package Type Part Number SC-70 2SC3356W Note SPQ:3,000pcs/Reel AiT provides all RoHS products PINDESCRIPTION
FEATURES
● Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE =10 V, IC = 7 mA, f = 1.0 GHz● High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
● Ultra high frequency low noise transistor
● Silicon epitaxial bipolar process
● High power gain, low noise gigure
● High dynamic range and idea current characteristics
● Mainly used in VHF, UHF and CATV
● Available in SC-70 package Pin# 1 2 3 Function BASE EMITTER COLLECTOR
ABSOLUTE MAXIMUM RATINGS
TA=25℃, unless Otherwise noted VCBO, Collector-base breakdown voltage 20V VCEO, Collector-emitter breakdown voltage 12V VEBO, Emitter-base breakdown voltage 3.0V IC, Collector Current 100mA PC, Collector Power Dissipation 150mW TJ, Junction Temperature 150℃ TSTG, Storage Temperature -65℃~+150℃ Stresses above may cause permanent damage to the device.
