AiT Semiconductor AM2306
The AM2306 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch and PWM applications. The AM2306 is available in SOT-23S package.| Part No. | AM2306 |
|---|---|
| Datasheet | AM2306 Download |
| Manufacturer |  AiT Semiconductor |
| Description | -30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
The AM2306 is available in SOT-23S package.● VDS = 30V,ID = 5.8A RDS(ON) < 31mΩ @ VGS=10V RDS(ON) < 43mΩ @ VGS=4.5V
● High Power and current handing capability
● Surface mount package
● Available in SOT-23S Package APPLICATION
● Load switch
● PWM application ORDERING INFORMATION TYPICAL APPLICATION Package Type Part Number SOT-23S AM2306E3SR E3S AM2306E3SVR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Schematic diagram REV3.1 - MAR 2011 RELEASED, FEB 2017 UPDATED - -1- AiT Semiconductor Inc. PIN
DESCRIPTION
AM2306 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET Pin # 1 2 3 Top View Symbol G S D Function Gate Source DrainABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted VDS, Drain-Source Voltage 30V VGS, Gate-Source Voltage ±20V ID, Drain Current-Continuous 5.8A IDM, Drain Current-Pulsed NOTE1 PD, Maximum Power Dissipation 20A 1.4W TJ, TSTG, Operating Junction and Storage Temperature Range -55℃~150℃ Stress beyond above listed “ABSOLUTE MAXIMUM RATINGS
” may lead permanent damage to the device.
