AiT Semiconductor BD139
The BD135, BD137 and BD139 are available in TO-126 (SOT32) Package. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied.| Part No. | BD139 |
|---|---|
| Datasheet | BD139 Download |
| Manufacturer |  AiT Semiconductor |
| Description | PLASTIC MEDIUM-POWER SILICON NPN POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
FEATURE● Complementary with BD136, BD138 and BD140
● Available in TO-126 (SOT32) Package ORDERING INFORMATION Package Type Part Number BD135-6 BD135-10 BD135-16 TO-126 (SOT32) BD137-6 BD137-10 BD137-16 BD139-6 BD139-10 BD139-16 Note SPQ: 500pcs/Bag AiT provides all RoHS Compliant Products hFE TABLE Range hFE BD135-6 BD137-6 BD139-6 40~100 PIN
DESCRIPTION
PIN# 1 2 3 NPNDESCRIPTION
EMITTER COLLECTOR BASE BD135-10 BD137-10 BD139-10 63~160 BD135-16 BD137-16 BD139-16 100~250 REV1.0 - JUL 2025 RELEASED - -1- AiT Semiconductor Inc. BD135_137_139 TRANSISTOR PLASTIC MEDIUM-POWER SILICON NPN POWER TRANSISTORABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise specified BD135 45V BVCBO, Collector-Base Voltage BD137 60V BD139 80V BD135 45V BVCEO, Collector-Emitter Voltage BD137 60V BD139 80V BVEBO, Emitter-Base Voltage IC, Collector Current PC, Collector Power Dissipation TSTG, Storage Temperature TJ, Junction Temperature 5V 1.5A 12.5W -55℃ ~ + 150℃ +150℃ Stresses above may cause permanent damage to the device.
