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AWT6252 - Linear Power Amplifier Module

General Description

The AWT6252 meets the increasing demands for higher output power in 3GPP 1XRTT handsets.

The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset.

Key Features

  • InGaP HBT Technology High Efficiency: 39% Low Quiescent Current: 50 mA Low Leakage Current in Shutdown Mode:.

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Datasheet Details

Part number AWT6252
Manufacturer ANADIGICS
File Size 188.44 KB
Description Linear Power Amplifier Module
Datasheet download datasheet AWT6252 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AWT6252 IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • • • • • • • InGaP HBT Technology High Efficiency: 39% Low Quiescent Current: 50 mA Low Leakage Current in Shutdown Mode: <1 µA VREF = +2.85 V (+2.75 V min over temp) Optimized for a 50 Ω System Low Profile Miniature Surface Mount Package: 1.56mm Max AWT6252 APPLICATIONS • Dual Mode 3GPP Wireless Handsets M7 Package 10 Pin 4 x 4 x 1.5 mm Surface Mount Module PRODUCT DESCRIPTION The AWT6252 meets the increasing demands for higher output power in 3GPP 1XRTT handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset.