The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Product Summary
V(BR)DSS 20V
RDS(on)MAX 55mΩ@4.5V 80mΩ@2.5V
ID 3.0A
AS2302
N-Channel Enhancement Mode MOSFET
Feature
Advanced trench process technology High density cell design for ultra low on-resistance
Application
Load Switch for Portable Devices DC/DC Converter
Package
Circuit diagram
SOT-23
Marking
2302B.
Page 1
Document ID AS-3150032
Issued Date 2003/03/08
Revised Date 2022/05/16
Revision G
Page. 5
AS2302
N-Channel Enhancement Mode MOSFET
Absolute maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction Temperature Storage Temperature
VDS
20
V
VGS
±10
V
ID
3.0
A
IDM
14
A
PD
0.