AS2302 Datasheet PDF

Product Summary V(BR)DSS 20V RDS(on)MAX 55mΩ@4.5V 80mΩ@2.5V ID 3.0A AS2302 N-Channel Enhancement Mode MOSFET Feature Advanced trench process technology High density cell design for ultra low on-resistance Application Load Switch for Portable Devices DC/DC Converter Package Circuit diagram SOT-23 Marking 2302B. Page 1 Document ID AS-3150032 Issued Date 2003/03/08 Revised Date 2022/05/16 Revision G Page. 5 AS2302 N-Channel Enhancement Mode MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction Temperature Storage Temperature VDS 20 V VGS ±10 V ID 3.0 A IDM 14 A PD 0.7 W TJ 150 ℃ TSTG -55 ~ +150 ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Static Characteristics Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current V(BR)DSS IDSS IGSS VGS = 0V, ID =250µA VD...