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APM2805QA - P-Channel MOSFET

General Description

MOSFET -20V/-2.6A, RDS(ON)= 85mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V Super High Dense Cell Design Reliable and Rugged SBD

VF=0.45V (typ.) @ If=500mA.

Lead Free and Green Devices Available (RoHS Compliant) C8 C7 D6 D5 A1 A2 S3 G4

Key Features

  • Pin.

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Datasheet Details

Part number APM2805QA
Manufacturer ANPEC
File Size 243.92 KB
Description P-Channel MOSFET
Datasheet download datasheet APM2805QA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Features Pin Description MOSFET • -20V/-2.6A, RDS(ON)= 85mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • Super High Dense Cell Design • Reliable and Rugged SBD • VF=0.45V (typ.) @ If=500mA.