Datasheet Summary
Dual Enhancement Mode MOSFET (N- and P-Channel)
Features
- N-Channel
40V/7.5A,
RDS(ON)=25mΩ (typ.) @ VGS=10V RDS(ON)=35mΩ (typ.) @ VGS=4.5V
- P-Channel
-40V/-6A,
RDS(ON)=37mΩ
(typ.)
@
V= GS
-10V
RDS(ON)=49mΩ
(typ.)
@
V =-4.5V GS
- Super High Dense Cell Design
- Reliable and Rugged
- Lead Free and Green Devices Available (RoHS pliant)
Applications
- Power Management in LCD monitor/TV
Pin Description
D1 D2
S1 G1 S2 G2
Top View of TO-252-4
(3) (3) D1 D2
(2) (5) G1 G2
S1 (1)
N MOS
S2...