AM6N40R Datasheet | AP Semiconductor

FEATURES - Low drain-source On resistance : RDS(on) = 0.9Ω (Typ.) - Low gate charge : Qg = 14n C (Typ.) - Low reverse transfer capacitance : Crss = 9.5p F (Typ.) - Ro HS pliant device - 100% avalanche tested APPLICATIONS - High speed switching - LED power - Motor power Ordering Information Part No AM6N40RD Package TO-252 Packing Reel & Tape Finish Sn Halogen Free Packing Unit 2,500ea Marking Information Row 1 : AP Row 2 : Product Information Row 3 : Date Code - YY : Year Code - WW : Week Code Maximum Ratings (TC=25 °C, unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC)- Drain current (Pulsed)- Single avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range - Limited only maximum junction temperature Symbol VDS VGS TC = 25℃ ID TC = 100℃ IDM EAS IAR EAR PD TJ Tstg .apsemi. Rating 400 ±30 5.5 3.46 22 380 5.5 5.5 55 150 -55~150 Unit V V A m J A m J W ℃ ℃ REV. 00 Thermal...