AP Semiconductor AM6N40R
400V 6A Low Qg N-Ch Power MOSFET
| Part No. | AM6N40R |
|---|---|
| Datasheet | AM6N40R Download |
| Manufacturer | AP Semiconductor |
| Description | 400V 6A Low Qg N-Ch Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low drain-source On resistance : RDS(on) = 0.9Ω (Typ.)● Low gate charge : Qg = 14nC (Typ.)
● Low reverse transfer capacitance : Crss = 9.5pF (Typ.)
● RoHS compliant device
● 100% avalanche tested
APPLICATIONS
● High speed switching● LED power
● Motor power Ordering Information D S G Part No AM6N40RD Package TO-252 Packing Reel & Tape Finish Sn Halogen Free Packing Unit 2,500ea Marking Information Row 1 : AP Row 2 : Product Information Row 3 : Date Code - YY : Year Code - WW : Week Code
MAXIMUM RATINGS
(TC=25 °C, unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC)* Drain current (Pulsed)* Single avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range *Limited only maximum junction temperature Symbol VDS VGS TC = 25℃ ID TC = 100℃ IDM EAS IAR EAR PD TJ Tstg Rating 400 ±30 5.5 3.46 22 380 5.5 5.5 55 150 -55~150 Unit V V A A mJ A mJ W ℃ ℃ REV.
