AP02N90J Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP02N90J

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts.

Part No.	AP02N90J
Datasheet	AP02N90J Download
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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DESCRIPTION

S G D The through-hole version (AP02N90J) is available for lowprofile applications. S TO-252(H) G D S TO-251(J)

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TC=25¢J ID@TC=100¢J IDM PD@TC=25¢J EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 900 ±30 1.9 1.2 6 62.5 0.5 2 Units V V A A A W W/¢J mJ A ¢J ¢J Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 36 1.9 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.0 110 Units ¢J /W ¢J /W Data & specifications subject to change without notice 200418063-1/4 AP02N90H/J

ELECTRICAL CHARACTERISTICS

@Tj=25 C(unless otherwise specified) Symbol BVDSS £GB VDSS/£G Tj o Parameter Drain-Source Breakdown Voltage Test Conditions Min.