DESCRIPTION
GreenFETTM D G S D ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ ID@TC=25℃ IDM PD@TA=25℃ PD@TA=70℃ PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 3 3 4 5 3 3 SQ Rating 30 +20 15 12 59 120 2.2 1.4 34 28.8 24 -40 to 150 -40 to 150 Units V V A A A A W W W mJ A ℃ ℃ Continuous Drain Current, V GS @ 10V4 Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current Storage Temperature Range Operating Junction Temperature Range Single Pulse Avalanche Energy Thermal Data Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case4 Maximum Thermal Resistance, Junction-ambient 3 3.7 58 ℃/W ℃/W 1 201106013 Data and specifications subject to change without notice AP1001BSQ ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=15A VGS=4.5V, ID=12A Min.
Advanced Power Electronics
