AP18N20GJ Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP18N20GJ

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Part No.	AP18N20GJ
Datasheet	AP18N20GJ Download
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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DESCRIPTION

The through-hole version (AP18N20GJ) are available for low-profile applications. G D S TO-252(H) G D S TO-251(J)

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 200 ± 20 18 9.5 60 89 0.7 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.4 110 Unit ℃/W ℃/W Data & specifications subject to change without notice 201122062-1/4 AP18N20GH/J

ELECTRICAL CHARACTERISTICS

@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions Min. 200 2 - Typ. 0.25 9.5 19 5 6 9 21 25 19 185 3 1.6 Max. Units 170 4 10...