AP40P03GP Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP40P03GP

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercialindustrial through hole applications and suited for low voltage applications.

Part No.	AP40P03GP
Datasheet	AP40P03GP Download
Manufacturer	Advanced Power Electronics
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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DESCRIPTION

BVDSS RDS(ON) ID G D S -30V 28mΩ -30A TO-220(P)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Rating -30 ±20 -30 -18 -120 31.3 0.25 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Max. Max. Value 4 62 Units ℃/W ℃/W Data and specifications subject to change without notice 200731072-1/4 AP40P03GP

ELECTRICAL CHARACTERISTICS

@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=-250uA Breakdown Voltage Temperatu...