AP40T03P Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP40T03P

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Part No.	AP40T03P
Datasheet	AP40T03P Download
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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DESCRIPTION

The through-hole version (AP40T03P) are available for low-profile applications. G D G D S TO-263 TO-220 S Units V V A A A W W/℃ ℃ ℃

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 25 ± 25 28 24 95 31.25 0.25 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.0 62 Unit ℃/W ℃/W Data and specifications subject to change without notice 200127031 AP40T03S/P

ELECTRICAL CHARACTERISTICS

@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 25 1 - Typ. 0.032 Max. Units 25 45 3 1 25 ±100 V V/℃ mΩ mΩ V S uA...