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AP4407P Datasheet PDF

Advanced Power Electronics AP4407P

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (AP4407P) are available for low-profile applications.
Part No. AP4407P
Datasheet AP4407P Download
Manufacturer
Advanced Power Electronics
Description ENHANCEMENT MODE POWER MOSFET
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AP4407P datasheet page 1 preview

DESCRIPTION

GD S TO-263(S) The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 D TO-220(P) S Units V V A A A W W/ ℃ ℃ ℃ Rating -30 ±25 -50 -32 180 54 0.4 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.3 62 Unit ℃/W ℃/W Data and specifications subject to change without notice 200115041 AP4407S/P

ELECTRICAL CHARACTERISTICS

@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -30 -1 - Typ. -0.01 Max.
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