Advanced Power Electronics AP4511GD
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.| Part No. | AP4511GD |
|---|---|
| Datasheet | AP4511GD Download |
| Manufacturer |  Advanced Power Electronics |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
G1 D1 D2 G2 S1 S2ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 35 ±20 7 5.7 30 2.0 0.016 -55 to 150 -55 to 150 P-channel -35 ±20 -6.1 -5 -30 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 200621051-1/4 AP4511GD N-CHELECTRICAL CHARACTERISTICS
@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 35 1 - Typ. 0.02 20 30 9 11 3 6 12 7 22 6 830 150 110 1.2 Max. Units 25 37 3 1 25 ±100 18 1330 1.8 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage T...
