Advanced Power Electronics AP4511GH
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.| Part No. | AP4511GH |
|---|---|
| Datasheet | AP4511GH Download |
| Manufacturer |  Advanced Power Electronics |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
THERMAL PERFORMANCE
▼ Fast Switching Performance S1 G1 D1/D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID 35V 30mΩ 15A -35V 48mΩ -12A S2 G2DESCRIPTION
TO-252-4L D1 D2 G1 S1 G2 S2ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 35 ±20 15 9 50 10.4 0.083 -55 to 150 -55 to 150 P-channel -35 ±20 -12 -7 -50 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case 3 3 Value Max. Max. 12 110 Units ℃/W ℃/W Thermal Resistance Junction-ambient Data and specifications subject to change without notice 200222053 AP4511GH N-CHELECTRICAL CHARACTERISTICS
@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
