Advanced Power Electronics AP4525GEM
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.| Part No. | AP4525GEM |
|---|---|
| Datasheet | AP4525GEM Download |
| Manufacturer |  Advanced Power Electronics |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
D1 G1 G2 D2 S1 S2ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 40 ±16 6.0 5.0 30 2.0 0.016 -55 to 150 -55 to 150 P-channel -40 ±16 -5.0 -4.0 -30 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 200725064-1/7 AP4525GEM N-CHELECTRICAL CHARACTERISTICS
@ Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. 0.04 6 8 1.5 4 7 20 20 4 580 100 70 2 Max. Units 28 32 3 1 25 ±30 13 930 3 V V/℃ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns...
