VBsemi Electronics AP4525GEM
N- and P-Channel 30V MOSFET
| Part No. | AP4525GEM |
|---|---|
| Datasheet | AP4525GEM Download |
| Manufacturer | VBsemi Electronics |
| Description | N- and P-Channel 30V MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Trench Power MOSFET
● 100 % Rg and UIS Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Motor Drive● Mobile Power Bank S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 D1 G1 S1 S2 G2 D2
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C ID TA = 70 °C IDM TC = 25 °C TA = 25 °C IS ISM L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C TA = 25 °C PD 30 ± 20 8e 6.8 6.8b, c 5.4b, c 40 2.6 1.6b, c 40 10 5 3.1 2 2b, c - 30 ± 20 - 8e - 6.8 - 6.6b, c - 5.3b, c - 40 - 2.6 - 1.6b, c - 40 - 20 20 3.2 2.1 2b, c Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg 1.28b, c 1.28b, c - 55 to 150 THERMAL RESISTANCE RATINGS N-Channel Parameter Symbol Typ.
