Advanced Power Electronics AP4578GD
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.| Part No. | AP4578GD |
|---|---|
| Datasheet | AP4578GD Download |
| Manufacturer |  Advanced Power Electronics |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
PDIP-8 G2 S2 G1 S1 AP4578GD Pb Free Plating Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID 60V 64mΩ 4.5A -60V 125mΩ -3A D1 D2 G1 G2 S1 S2ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating N-channel P-channel 60 -60 ±20 ±20 4.5 -3 3.6 20 2.0 -2.4 -20 0.016 -55 to 150 -55 to 150 Max. Value 62.5 Units V V A A A W W/℃ ℃ ℃ Unit ℃/W Data and specifications subject to change without notice 200616051-1/7 AP4578GD N-CHELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd...
