Advanced Power Electronics AP4578GH
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
| Part No. | AP4578GH |
|---|---|
| Datasheet | AP4578GH Download |
| Manufacturer |  Advanced Power Electronics |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
THERMAL PERFORMANCE
D1/D2 ▼ Fast Switching Performance S1 G1 S2 G2DESCRIPTION
TO-252-4L Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 60V 72mΩ 9A -60V 125mΩ -6A D2 G1 G2 S1 S2ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating N-channel P-channel 60 -60 +25 +25 9 -6 6 -4 30 -30 8.9 0.07 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case3 Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 14 110 Units ℃/W ℃/W 1 201108113 AP4578GH N-CHELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
