Advanced Power Electronics AP50G60SW
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
| Part No. | AP50G60SW |
|---|---|
| Datasheet | AP50G60SW Download |
| Manufacturer |  Advanced Power Electronics |
| Description | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| Buy | Stock & Price |
FEATURES
▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ.=2.6V@IC=33A ▼ Built-in Fast Recovery Diode G C E C VCES IC TO-3P GABSOLUTE MAXIMUM RATINGS
Symbol Parameter VCES VGE IC@TC=25oC IC@TC=100oC ICM IF@TC=25oC IF@TC=100oC PD@TC=25oC TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Forward Current Diode Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds . Rating 600 +30 75 45 150 40 15 300 -55 to 150 150 300 600V 45A C E Units V V A A A A A W oC oC oC Notes: 1.Repetitive rating : Pulse width limited by max. junction temperature . Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-Case Rthj-c(Diode) Thermal Resistance Junct
