DESCRIPTION
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D G D S TO-263(S) TO-220(P) S Rating 60 ±25 60 38 230 89 0.7 Units V V A A A W W/ ℃ mJ A ℃ ℃ ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current3 Storage Temperature Range Operating Junction Temperature Range 3 450 30 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.4 62 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200803183 AP9972GS/P ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min.
Advanced Power Electronics
