AP9972GI Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP9972GI

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications.

Part No.	AP9972GI
Datasheet	AP9972GI Download
Manufacturer	Advanced Power Electronics
Description	POWER MOSFET
Buy	Stock & Price

DESCRIPTION

G D S TO-220CFM(I)

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 60 ±25 35 22 120 31.3 0.25 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4 62 Units ℃/W ℃/W Data and specifications subject to change without notice 200105051 AP9972GI

ELECTRICAL CHARACTERISTICS

@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 60 1 - Typ. 0.06 40 35 9.5 20 12 37 47 59 280 230 1.6 Max. Units 18 22 3 10 25 ±100 56 2.4 V V/℃ mΩ mΩ V S uA uA nA nC nC...