DESCRIPTION
APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. G DS TO-220(P) ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperatur
Advanced Power Electronics
