AP120N06BD
Description
AP120N06BD 60V N-Channel Enhancement Mode MOSFET The AP120N06BD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application.
Key Features
- VDS = 60V ID =120A RDS(ON) < 5.5mΩ @ VGS=10V （Type：4.5mΩ）
