AP120N06BD - 60V N-Channel Enhancement Mode MOSFET

APM

General Description

operation with gate voltages as low as 10V.

or in other Switching application.

Key Features

VDS = 60V ID =120A RDS(ON) < 5.5mΩ @ VGS=10V （Type：4.5mΩ）.

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AP120N06BD 60v n-channel enhancement mode mosfet by APM - Datasheet Preview

Datasheet Details

Part number	AP120N06BD
Manufacturer	APM
File Size	754.98 KB
Description	60V N-Channel Enhancement Mode MOSFET
Datasheet	AP120N06BD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP120N06BD 60V N-Channel Enhancement Mode MOSFET The AP120N06BD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =120A RDS(ON) < 5.5mΩ @ VGS=10V （Type：4.