DESCRIPTION
AP120N06BD 60V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 60V ID =120A RDS(ON) < 5.5mΩ @ VGS=10V （Type：4.5mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP120N06BD TO-252-3L AP120N06BD XXX YYYY ABSOLUTE MAXIMUM RATINGS
@Tj=25oC(unless otherwise specified) Symbol Parameter Value VDS Drain source voltage 60 VGS Gate source voltage ±20 ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 120 ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 53 IDM Pulsed drain current2) 360 IAS Diode forward current 29 PD Power dissipation 123 EAS Single pulsed avalanche energy) 206 Tstg，Tj Operation and storage temperature -55 to 150 RθJC Thermal resistance, junction-case 1.0 RθJA Thermal resistance, junction-ambient4) 62.5 Qty(PCS) 2500 Unit V V A A A A W mJ ℃ ℃/W ℃/W AP120N06BD REV1.0 永源微電子科技有限公司 1 AP120N06BD 60V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
