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AP15G02DF - 20V N+P-Channel Enhancement Mode MOSFET

General Description

The AP15G02DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V ID =15.5A RDS(ON) < 35mΩ @ VGS=4.5V （Type：22mΩ） VDS = -20V ID =-14.8A RDS(ON) < 35mΩ @ VGS=-4.5V（Type：28mΩ）.

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Datasheet Details

Part number AP15G02DF
Manufacturer APM
File Size 0.98 MB
Description 20V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP15G02DF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP15G02DF 20V N+P-Channel Enhancement Mode MOSFET The AP15G02DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =15.5A RDS(ON) < 35mΩ @ VGS=4.5V （Type：22mΩ） VDS = -20V ID =-14.8A RDS(ON) < 35mΩ @ VGS=-4.