DESCRIPTION
AP15G02DF 20V N+P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 20V ID =15.5A RDS(ON) < 35mΩ @ VGS=4.5V （Type：22mΩ） VDS = -20V ID =-14.8A RDS(ON) < 35mΩ @ VGS=-4.5V（Type：28mΩ） Application High Frequency Circuit low-power consumption Package Marking and Ordering Information Product ID Pack AP15G02DF PDFN3*3-8L Marking AP15G02DF XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter N-Ch P-Ch VDS Drain-Source Voltage 20 -20 VGS Gate-Source Voltage ±12 ±12 ID@TA=25℃ ID@TA=70℃ IDM EAS PD@TA=25℃ Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Total Power Dissipation4 15.5 -14.8 12.2 -11.5 48 -44 24 78 1.5 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 85 RθJC Thermal Resistance Junction-Case1 60 Qty(PCS) 3000 Units V V A A A mJ W ℃ ℃ ℃/W ℃/W AP15G02DF REV1.0 永源微電子科技有限公司 1 AP15G02DF 20V N+P-Channel Enhancement Mode MOSFET N-ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
