AP15G02DF Overview
Description
AP15G02DF 20V N+P-Channel Enhancement Mode MOSFET The AP15G02DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
Key Features
- VDS = 20V ID =15.5A RDS(ON) < 35mΩ @ VGS=4.5V （Type：22mΩ） VDS = -20V ID =-14.8A RDS(ON) < 35mΩ @ VGS=-4.5V（Type：28mΩ）
