DESCRIPTION
AP15H10S 100V N+N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 100V ID =15A RDS(ON) < 53mΩ @ VGS=10V (Type：43mΩ) Application DC/DC Converter LED Backlighting Power Management Switches Package Marking and Ordering Information Product ID Pack AP15H10S SOP-8L Marking AP15H10S XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation4 Storage Temperature Range TJ RθJA RθJC Operating Junction Temperature Range Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Rating 100 ±20 15 10 60 14.5 8.5 35.7 -55 to 150 -55 to 150 3.5 62 Qty(PCS) 3000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP15H10S REV1.0 永源微電子科技有限公司 1 AP15H10S 100V N+N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TC=25℃unless otherwise noted) Symbol Parameter Test Condition Min.
APM
