AP15H10S Overview
Description
AP15H10S 100V N+N-Channel Enhancement Mode MOSFET The AP15H10S uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Key Features
- VDS = 100V ID =15A RDS(ON) < 53mΩ @ VGS=10V (Type：43mΩ)
