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AP15H10S - 100V N+N-Channel Enhancement Mode MOSFET

General Description

to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 100V ID =15A RDS(ON) < 53mΩ @ VGS=10V (Type:43mΩ).

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Datasheet Details

Part number AP15H10S
Manufacturer APM
File Size 0.98 MB
Description 100V N+N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP15H10S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP15H10S 100V N+N-Channel Enhancement Mode MOSFET The AP15H10S uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.