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AP180N03P - 30V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP180N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS=30V ID =180A RDS(ON) < 3.2mΩ @ VGS=10V （Type：2.1mΩ）.

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Datasheet preview – AP180N03P

Datasheet Details

Part number AP180N03P
Manufacturer APM
File Size 1.72 MB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP180N03P Datasheet
Additional preview pages of the AP180N03P datasheet.

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Full PDF Text Transcription

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Description AP180N03PIT 30V N-Channel Enhancement Mode MOSFET The AP180N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS=30V ID =180A RDS(ON) < 3.2mΩ @ VGS=10V （Type：2.
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