DESCRIPTION
AP180N03PIT 30V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS=30V ID =180A RDS(ON) < 3.2mΩ @ VGS=10V （Type：2.1mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP180N03T TO-263-3L AP180N03P TO-220-3L Marking AP180N03T XXXX YYYY AP180N03P XXXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID@TC=25℃ Gate-Source Voltage Continuous Drain Current, VGS @ 10V1,6 ID@TC=100℃ Continuous Drain Current, VGS @ 10V1,6 IDM EAS Pulsed Drain Current2 Single Pulse Avalanche Energy3 IAS PD@TC=25℃ Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range Rating 30 ±20 180 145 500 246 70.2 187 -55 to 175 TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 -55 to 175 62 0.8 Qty(PCS) 800 1000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W 1 AP180N03P/T RVE1.0 永源微電子科技有限公司 AP180N03PIT 30V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
