Datasheet Details
| Part number | AP180N03P |
|---|---|
| Manufacturer | APM |
| File Size | 1.72 MB |
| Description | 30V N-Channel Enhancement Mode MOSFET |
| Datasheet |
 AP180N03P Datasheet
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General Description
The AP180N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection or in other Switching application.
Key Features
- VDS=30V ID =180A RDS(ON) < 3.2mΩ @ VGS=10V （Type：2.1mΩ）.