Datasheet4U Logo Datasheet4U.com

AP180N03T - 30V N-Channel Enhancement Mode MOSFET

Download the AP180N03T datasheet PDF. This datasheet also covers the AP180N03P variant, as both devices belong to the same 30v n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The AP180N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS=30V ID =180A RDS(ON) < 3.2mΩ @ VGS=10V （Type：2.1mΩ）.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP180N03P-APM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AP180N03T
Manufacturer APM
File Size 1.72 MB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP180N03T Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AP1801GU P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
AP1802GU N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
AP18N20AGS-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
AP18N20GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
AP18N20GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

Other Datasheets by APM

Part Number Description
AP180N03P 30V N-Channel Enhancement Mode MOSFET
AP18N20F 200V N-Channel Enhancement Mode MOSFET
AP18N20P 200V N-Channel Enhancement Mode MOSFET
AP18N20T 200V N-Channel Enhancement Mode MOSFET
AP18P02BF -20V P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Description AP180N03PIT 30V N-Channel Enhancement Mode MOSFET The AP180N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS=30V ID =180A RDS(ON) < 3.2mΩ @ VGS=10V （Type：2.