DESCRIPTION
AP18N20FIPIT 200V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 200V ID =18A RDS(ON) < 150mΩ @ VGS=10V （Type：120mΩ） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking AP18N20F TO220F-3L AP18N20F XXX YYYY AP18N20P TO220-3L AP18N20P XXX YYYY AP18N20T TO263-3L AP18N20T XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter Value VDSS Drain-Source Voltage (VGS = 0V) 200 ID Continuous Drain Current 18 IDM Pulsed Drain Current (note1) 72 VGS Gate-Source Voltage ±20 EAS Single Pulse Avalanche Energy (note2) 340 IAR Avalanche Current (note1) 15 EAR Repetitive Avalanche Energy note1) 8.3 PD Power Dissipation (TC = 25ºC) 104 TJ, Tstg Operating Junction and Storage Temperature Range -55~+150 RthJC Thermal Resistance, Junction-to-Case 1.2 RthJA Thermal Resistance, Junction-to-Ambient 62.5 Qty(PCS) 1000 1000 800 Unit V A A V mJ A mJ W ºC ºC/W ºC/W 1 AP18N20F/P/...
APM
