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AP18N20T - 200V N-Channel Enhancement Mode MOSFET

Download the AP18N20T datasheet PDF. This datasheet also covers the AP18N20F variant, as both devices belong to the same 200v n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

performance and enhance the avalanche energy.

Key Features

  • VDS = 200V ID =18A RDS(ON) < 150mΩ @ VGS=10V (Type:120mΩ).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP18N20F-APM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AP18N20T
Manufacturer APM
File Size 751.60 KB
Description 200V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP18N20T Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Description AP18N20FIPIT 200V N-Channel Enhancement Mode MOSFET The AP18N20F/P/T is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.