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AP2322MI - 20V N-Channel Enhancement Mode MOSFET

General Description

The AP2322MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V ID =12A RDS(ON) < 12mΩ @ VGS=4.5V （Type：9.0mΩ）.

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Datasheet Details

Part number AP2322MI
Manufacturer APM
File Size 599.62 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP2322MI Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description The AP2322MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =12A RDS(ON) < 12mΩ @ VGS=4.5V （Type：9.0mΩ） Application 3.3V MCU Drive Load switch Uninterruptible power supply AP2322MI 20V N-Channel Enhancement Mode MOSFET Package Marking and Ordering Information Product ID Pack AP2322MI SOT23-3L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage VGSS ID@TA=25℃ ID@TA=70℃ IDM EAS PD@TA=25℃ TJ, TSTG RθJA RθJC Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.