DESCRIPTION
GENERAL FEATURES
VDS = 20V ID =12A RDS(ON) < 12mΩ @ VGS=4.5V （Type：9.0mΩ） Application 3.3V MCU Drive Load switch Uninterruptible power supply AP2322MI 20V N-Channel Enhancement Mode MOSFET Package Marking and Ordering Information Product ID Pack AP2322MI SOT23-3L ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage VGSS ID@TA=25℃ ID@TA=70℃ IDM EAS PD@TA=25℃ TJ, TSTG RθJA RθJC Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Single Pulsed Avalanche Energy note2 Power Dissipation Operating and Storage Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance, Junction to Case AP2322MI REV1.0 Marking 2322M AP Max. 20 ±12 12 8.0 120 147.6 37 -55 to +175 125 4 Qty(PCS) 3000 Units V V A A A mJ W ℃ ℃/W ℃/W 永源微電子科技有限公司 1 AP2322MI 20V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25 ℃, unless otherwise noted) Symbol Parameter Test Condition Min.
APM
