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AP2322GN - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 20V.
  • ID = 2.5 A.
  • RDS(ON) < 90mΩ (VGS = 4.5V).
  • RDS(ON) < 120mΩ (VGS = 2.5V).
  • RDS(ON) < 150mΩ (VGS = 1.8V) D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1 G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Pow.

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SMD Type N-Channel MOSFET AP2322GN (KP2322GN) MOSFET ■ Features ● VDS (V) = 20V ● ID = 2.5 A ● RDS(ON) < 90mΩ (VGS = 4.5V) ● RDS(ON) < 120mΩ (VGS = 2.5V) ● RDS(ON) < 150mΩ (VGS = 1.8V) D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1 G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Linear Derating Factor Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ TA=25℃ Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 20 ±8 2.5 2 10 0.833 0.