| Part Number | AP2322GN Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
N-Channel MOSFET AP2322GN (KP2322GN)
MOSFET
■ Features
● VDS (V) = 20V ● ID = 2.5 A ● RDS(ON) ＜ 90mΩ (VGS = 4.5V) ● RDS(ON) ＜ 120mΩ (VGS = 2.5V) ● RDS(ON) ＜ 150mΩ (VGS = 1.8V)
D
+0.2 2.8 .
* VDS (V) = 20V * ID = 2.5 A * RDS(ON) ＜ 90mΩ (VGS = 4.5V) * RDS(ON) ＜ 120mΩ (VGS = 2.5V) * RDS(ON) ＜ 150mΩ (VGS = 1.8V) D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source . |
AP2322GN Datasheet and Specifications PDF
The AP2322GN is a N-Channel MOSFET.
Key Specifications
| Package | SOT-23 |
|---|---|
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | AP2322GN Datasheet |
|---|---|
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Manufacturer | Advanced Power Electronics Corp |
| Overview | Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23S package is widely preferred . 0 V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 150 Unit ℃/W 1 201411284AP AP2322GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test . |