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AP25N10D - 100V N-Channel Enhancement Mode MOSFET

General Description

The AP25N10D uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 100V ID =25A RDS(ON) < 53mΩ @ VGS=10V (Type:43mΩ).

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Datasheet Details

Part number AP25N10D
Manufacturer APM
File Size 834.44 KB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP25N10D Datasheet

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AP25N10D 100V N-Channel Enhancement Mode MOSFET Description The AP25N10D uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.