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AP25N10GJ-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP25N10GJ-HF, a member of the AP25N10GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

AP25N10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet preview – AP25N10GJ-HF

Datasheet Details

Part number AP25N10GJ-HF
Manufacturer Advanced Power Electronics
File Size 102.63 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP25N10GJ-HF Datasheet
Additional preview pages of the AP25N10GJ-HF datasheet.

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Full PDF Text Transcription

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Advanced Power Electronics Corp. AP25N10GH/J-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Single Drive Requirement ▼ RoHS Compliant & Halogen-Free G D S BVDSS RDS(ON) ID 100V 80mΩ 23A Description AP25N10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP25N10GJ) are available for low-profile applications.
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