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AP28N50F - 500V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP28N50F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

  • VDS = 500V ID =28A RDS(ON) < 260mΩ @ VGS=10V （Type：195mΩ）.

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Datasheet Details

Part number AP28N50F
Manufacturer APM
File Size 1.90 MB
Description 500V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP28N50F Datasheet
Additional preview pages of the AP28N50F datasheet.

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Full PDF Text Transcription

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AP28N50FIP 500V N-Channel Enhancement Mode MOSFET Description The AP28N50F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
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