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AP28N50P Datasheet PDF

APM AP28N50P

The AP28N50F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Part No. AP28N50P
Datasheet AP28N50P Download
Manufacturer
APM
Description 500V N-Channel Enhancement Mode MOSFET
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AP28N50P datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = 500V ID =28A RDS(ON) < 260mΩ @ VGS=10V (Type:195mΩ) Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking AP28N50F TO-220F-3L AP28N50F XXX YYYY AP28N50P TO-220-3L AP28N50P XXX YYYY

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage ID IDM VGSS EAS IAR EAR dv/dt Drain Current - Continuous Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) PD Tj ,Tstg RθJC Power Dissipation (TC = 25°C) Operating and Storage Temperature Range Thermal Resistance, Junction-to-Case Value 500 28 80* ± 30 957 20 101 5 37.0 -55 to +150 3.69 RθJA Thermal Resistance, Junction-to-Ambient 44.2 Qty(PCS) 1000 1000 Units V A A V mJ A mJ V/ns W/°C °C °C/W °C/W 1 AP28N50F/P RVE1.0 永源微電子科技有限公司 AP28N50FIP 500V N-Channel Enhanc...
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