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AP28N50P - 500V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AP28N50P, a member of the AP28N50F 500V N-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

The AP28N50F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

  • VDS = 500V ID =28A RDS(ON) < 260mΩ @ VGS=10V （Type：195mΩ）.

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Datasheet preview – AP28N50P

Datasheet Details

Part number AP28N50P
Manufacturer APM
File Size 1.90 MB
Description 500V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP28N50P Datasheet
Additional preview pages of the AP28N50P datasheet.

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Full PDF Text Transcription

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AP28N50FIP 500V N-Channel Enhancement Mode MOSFET Description The AP28N50F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
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